SK Hynix Achieves Technological Lead in NAND Flash with 321-Layer Chip

SK Hynix has reportedly taken the technological lead in the NAND flash market with the development of the world's first 321-layer NAND flash chip. This achievement marks a significant milestone for the company, potentially challenging Samsung's long-held dominance in the segment. The new 321-layer NAND chip promises substantial performance improvements, including 12% faster data transfer speeds, 13% better read performance, and over 10% higher power efficiency. This puts SK Hynix's technology at the forefront of NAND flash innovation. The company claims a 35% increase in layer count compared to its previous generation technology. This development has reportedly shaken Samsung, long considered the pioneer in cell stacking technology. As BusinessKorea noted: If Samsung Electronics allows SK Hynix to catch up in NAND flash following DRAM and HBM, it will be a triple blow, and the symbolism for the industry will be significant...Although Samsung Electronics’ sales share is curren…